A Compact Scattering Model for the Nanoscale Double-Gate MOSFET
نویسندگان
چکیده
An analytically compact model for the nano-scale double gate MOSFET based on McKelvey’s flux theory is developed. The model is continuous above and below threshold and from the linear to saturation regions. Most importantly, it describes nano-scale MOSFETs from the diffusive to ballistic regimes. In addition to its use in exploring the limits and circuit applications of double gate MOSFETs, the model also serves as an example of how semiclassical scattering theory can be used to develop physically sound models for nano-scale transistors.
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